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7473966 Oxide-bypassed lateral high voltage structures and methods  
A lateral high-voltage active device structure, in which field-shaping trench electrodes are capacitively coupled to the voltage-withstand region near the source end thereof.
7466006 Structure and method for RESURF diodes with a current diverter  
Methods and apparatus are provided for reducing substrate leakage current of lateral RESURF diode devices. The diode device ( 60, 60′, 100 ) comprises first ( 39 ) and second ( 63 ) surface...
7462541 Manufacturing method of semiconductor device  
A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer...
7449400 Method of forming an isolation film in a semiconductor device  
The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped...
7436041 Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier  
An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a...
7436025 Termination structures for super junction devices  
A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12 ; and a third layer 16 is provided over the second...
7429774 Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof  
An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well...
7427795 Drain-extended MOS transistors and methods for making the same  
Drain-extended MOS transistors (T 1 , T 2 ) and semiconductor devices ( 102 ) are described, as well as fabrication methods ( 202 ) therefor, in which a p-buried layer ( 130 ) is formed prior to...
7423319 LDPMOS structure with enhanced breakdown voltage  
A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type...
7420245 Semiconductor device and method of manufacturing the same  
A first semiconductor pillar layer of a first conductivity type is formed on a main surface of a semiconductor substrate of the first conductivity type. A second semiconductor pillar layer of a...
7414268 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities  
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are...
7411248 Vertical unipolar component periphery  
A vertical unipolar component formed in a semiconductor substrate, comprising vertical fingers made of a conductive material surrounded with silicon oxide, portions of the substrate being present...
7378317 Superjunction power MOSFET  
Methods and apparatus are provided for TMOS devices, comprising multiple N-type source regions, electrically in parallel, located in multiple P-body regions separated by N-type JFET regions at a...
7372111 Semiconductor device with improved breakdown voltage and high current capacity  
The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged...
7372104 High voltage CMOS devices  
A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type...
7361955 High-voltage MOS device with dummy diffusion region  
A high-voltage MOS device includes a substrate; a drift ion well formed in the substrate; a first isolation region formed in the drift ion well; a gate electrode formed on the substrate and...
7348630 Semiconductor device for high frequency uses and manufacturing method of the same  
The semiconductor device has a semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a pair of impurity diffusion layers formed in a surface layer of the...
7345340 Semiconductor integrated circuit and a semiconductor device  
A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region...
7335949 Semiconductor device and method of fabricating the same  
A semiconductor device 100 includes an element-forming region having gate electrode 108 formed therein, and a circumferential region formed in the outer circumference of the element-forming...
7332770 Semiconductor device  
A semiconductor device of this invention is a vertical power MOSFET having a plurality of first trenches where a trench gate is formed. It has a first column region of a second conductivity type...
7332756 Damascene gate structure with a resistive device  
A semiconductor structure having a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. The structure includes a first dielectric layer having a first opening...
7304356 IGBT or like semiconductor device of high voltage-withstanding capability  
A multiple-cell insulated-gate-bipolar-transistor chip is disclosed which includes a semiconductor substrate having formed therein a p + -type collector region and an n − -type base region, with...
7301203 Superjunction semiconductor device  
In accordance with an embodiment of the invention, a superjunction semiconductor device includes an active region and a termination region surrounding the active region. A central vertical axis of...
7301202 Semiconductor device and method of manufacturing the same  
A semiconductor substrate of a first conduction type is provided for serving as a common drain to a plurality of power MISFET cells. A middle semiconductor layer is formed on the semiconductor...
7282764 Semiconductor device  
A semiconductor device having high ruggedness is provided. The distance Wm 2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set...
7279747 Semiconductor device, and production method for manufacturing such semiconductor device  
A semiconductor device includes a first conductivity type semiconductor substrate. A first conductivity type drift layer is formed on a surface of the first conductivity type semiconductor...
7253486 Field plate transistor with reduced field plate resistance  
In one example embodiment, a transistor ( 100 ) is provided. The transistor ( 100 ) comprises a source ( 10 ), a gate ( 30 ), a drain ( 20 ), and a field plate ( 40 ) located between the gate ( 30...
7253474 Quasi-vertical semiconductor component  
A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order...
7244975 High-voltage device structure  
A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage...
7224025 Isolated LDMOS IC technology  
A lateral double diffused metal oxide semiconductor (LDMOS) device includes a gate to control the device, a drain coupled to the gate formed in a well of a first type, a source to form a current...
7217954 Silicon carbide semiconductor device and method for fabricating the same  
An inventive semiconductor device is provided with: a silicon carbide substrate 1; an n-type high resistance layer 2; well regions 3 provided in a surface region of the high resistance layer ...
7211846 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage  
A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel...
7202529 Field effect transistor  
A field effect transistor includes a substrate having a doping of a first conductivity type, a drain area in the substrate having a doping of a second conductivity type oppposite the first...
7190027 Semiconductor device having high withstand capacity and method for designing the same  
A semiconductor device includes a semiconductor substrate, a low concentration region, an intermediate concentration region, the first electrode region, and the second electrode region. The device...
7187033 Drain-extended MOS transistors with diode clamp and methods for making the same  
High side extended-drain MOS driver transistors (T 2 ) are presented in which an extended drain ( 108, 156 ) is separated from a first buried layer ( 120 ) by a second buried layer ( 130 ), wherein...
7176538 High voltage MOSFET having doped buried layer  
A MOSFET includes an insulated gate electrode on a surface of a semiconductor substrate having an impurity region of first conductivity type therein that extends to the surface. Source and drain...
7176524 Semiconductor device having deep trench charge compensation regions and method  
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the...
7170109 Heterojunction semiconductor device with element isolation structure  
A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon...
7166890 Superjunction device with improved ruggedness  
An improved superjunction semiconductor device includes a charged balanced pylon in a body region, where a top of the pylon is large to create slight charge imbalance. A MOSgated structure is...
7157772 Semiconductor device and method of fabricating the same  
A gate electrode has an end extended over a part of a LOCOS oxide film, and a source electrode has an end extended further than the end of the gate electrode over a part of the LOCOS oxide film. An...
7145203 Graded-junction high-voltage MOSFET in standard logic CMOS  
A high-voltage graded junction LDMOSFET includes a substrate of a first conductivity type, a well of the first conductivity type disposed in the substrate, a first region of a second conductivity...
7129546 Electrostatic discharge protection device  
An ESD protection device. The ESD protection device has a substrate; a channel region, a source region, and a drain region. The channel region is formed on a predetermined area of a surface of the...
7126191 Double-diffused semiconductor device  
A DMOSFET and a method of fabricating the same, capable of keeping a desirable level of drain voltage resistance and, at the same time, of reducing the drain resistance. In a DMOSFET configured as...
7126186 Compensation component and process for producing the component  
A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity...
7122861 Semiconductor device and manufacturing method thereof  
The present invention relates to a semiconductor device including a high withstand voltage MOS transistor and a manufacturing method thereof. The semiconductor device according to the present...
7122860 Trench-gate semiconductor devices  
A trench-gate semiconductor device, for example a MOSFET or IGBT, includes a semiconductor body ( 20 ) having a drain region ( 4 ) comprising a drain drift region ( 4 a ) and a drain contact region...
7115946 MOS transistor having an offset region  
A semiconductor device includes a semiconductor region of a first conductivity type, a drain region of the first conductivity type, an offset region of the first conductivity type, a body region of...
7098506 Semiconductor device and method for fabricating the same  
Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the...
7091557 Semiconductor component with increased dielectric strength and/or reduced on resistance  
The invention relates to a semiconductor component having a first semiconductor zone of a first conduction type, a second semiconductor zone of a second conduction type and a drift zone arranged...
7091556 High voltage drain-extended transistor  
The present invention provides, in one embodiment, a transistor ( 100 ). The transistor ( 100 ) comprises a doped semiconductor substrate ( 105 ) and a drain-extended well ( 115 ) having a curved...
Matches 1 - 50 out of 516 1 2 3 4 5 6 7 8 9 10 11 >